VPL, BSS Vishay Siliconix. Document Number: S—Rev. E , Jun P-Channel V (D-S) MOSFETs. DATA SHEET. Product specification. Supersedes data of April File under Discrete Semiconductors, SC13b. Jun DISCRETE. BSS92 datasheet, BSS92 circuit, BSS92 data sheet: SIEMENS – SIPMOS Small- Signal Transistor (P channel Enhancement mode Logic Level),alldatasheet.
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P-channel 200-v (d-s) Mosfets – Vishay Siliconix
Exposure to limiting values for extended periods may affect device reliability. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
P-channel enhancement mode vertical D-MOS transistor.
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Philips Semiconductors, 6F, No. AllmendstrasseCH Z? These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci? The new type of capacitor has a space-saving design with two, three or even ten identical capacitors connected in parallel on the same terminal to increase the capacitance.
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Philips Semiconductors Philippines Inc. This data sheet contains preliminary data; supplementary data may be published later. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such dafasheet use or sale.
Application information Where application information is given, it is advisory and does not form part of the speci?
No liability will be accepted by the publisher for any consequence of its use. Stress above one or more of the limiting values may cause permanent damage to the device. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Register Log in Shopping cart 0 You have no items in your shopping cart.